Today's introduction is focusing on the Semi-conductor FQD13N06TM. It is one of the FQD13N06 N-Channel series. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
Features:
1. 10A, 60V, RDS(on) = 0.14? @VGS = 10 V
2. Low gate charge ( typical 5.8 nC)
3. Low Crss ( typical 15 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. RoHS Compliant
More details of such electronic components, visit www.hqew.net
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