FDN336P: Single P-Channel 2.5V Specified PowerTrench MOSFET

In today’s electronic components development, more and more enterprise play increasing concerns on power management due to saving energy for our next and next generations and protecting our environments as well. And, for this Fairchild semiconductor is being one of the most shining products these day. Fairchild semiconductors are everywhere you can see, power sources , lighting , monitors, etc. Maybe the component FDN336P will get you more closed to the Fairechild semiconductor.

General Description of FDN336P

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s      advanced PowerTrench process that has been especially tailored to minimize the on-state   resistance and yet maintain low gate charge for superior switching performance. These   devices are well suited for portable electronics applications: load switching and power   management, battery charging circuits and DC/DC conversion.

Features:

1.       3 A, –20 V. R_DS(ON) = 0.20 Ω @ VGS = –4.5 V

                            R_DS(ON) = 0.27Ω@ VGS = –2.5 V

2.       Low gate charge (3.6 nC typical) 

3.       High performance trench technology for extremely low R_DS(ON)

_4. SuperSOTTM -3 provides low R_DS(ON) and 30% higher power handling capability than SOT23 in the same footprint