2011年4月28日星期四

2SC3356: NPN Silicon Epitaxial Transistor

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 
This electronic component  is now newly in stock in Hqew.net.

FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE  MAXIMUM  RATINGS  (TA = 25 )
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -65 to +150

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