HUF75332G3: A Power Efficiency Necessary Component

The component HUF75332G3 is a N-Channel power MOSFET which is manufactured by using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

The electronic component HUF75332G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Features

• 60A, 55V

• Simulation Models

- Temperature Compensated PSPICE and SABER Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”